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Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Identifieur interne : 00DB83 ( Main/Repository ); précédent : 00DB82; suivant : 00DB84

Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Auteurs : RBID : Pascal:03-0016356

Descripteurs français

Pascal (Inist)
- 6865F, 7870C, Etude expérimentale, Puits quantique semiconducteur, Diffusion RX, Diffraction RX, Paramètre cristallin, Semiconducteur bande interdite large, Semiconducteur III-V, Indium composé, Gallium composé.

English descriptors

KwdEn :
- Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Lattice parameters, Semiconductor quantum wells, Wide band gap semiconductors, X-ray scattering, XRD.

Abstract

We have determined the absolute indium content incorporated in the crystalline lattice of InGaN films and InGaN/GaN multiple quantum wells using anomalous x-ray scattering (AXS). AXS spectra were obtained near the In K absorption edge at the InGaN (0006) Bragg peak where the InGaN Bragg reflection is well-resolved from the GaN reflections. By comparing the indium composition obtained by AXS to regular x-ray scattering results, which are also sensitive to the lattice strain, we determine the Poisson ratio of InGaN to be ν≃0.23. The AXS method can be effective in determining absolute chemical composition of InGaN independent of the lattice strain, which is especially valuable for InGaN multiple quantum wells. © 2002 American Institute of Physics.

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<front><div type="abstract" xml:lang="en">We have determined the absolute indium content incorporated in the crystalline lattice of InGaN films and InGaN/GaN multiple quantum wells using anomalous x-ray scattering (AXS). AXS spectra were obtained near the In K absorption edge at the InGaN (0006) Bragg peak where the InGaN Bragg reflection is well-resolved from the GaN reflections. By comparing the indium composition obtained by AXS to regular x-ray scattering results, which are also sensitive to the lattice strain, we determine the Poisson ratio of InGaN to be ν≃0.23. The AXS method can be effective in determining absolute chemical composition of InGaN independent of the lattice strain, which is especially valuable for InGaN multiple quantum wells. © 2002 American Institute of Physics.</div>
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Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Descripteurs français

English descriptors

Abstract

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